* RDS(on) = 81 mΩ (Typ.) @ VGS = 10 V, ID = 18 A
* Ultra Low Gate Charge (Typ. Qg = 86 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 361 pF)
*.
such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
D
GDS
TO-220
GDS
TO-.
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise pro.
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